PART |
Description |
Maker |
APT902RBN APT902R4BN |
TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 7A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 900V五(巴西)直| 7A条(丁)|采用TO - 247AD TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 6.5A I(D) | TO-247AD
|
Unisonic Technologies Co., Ltd.
|
APT601R2BN |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 8A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 600V的五(巴西)直| 8A条(丁)|采用TO - 247AD
|
Diodes, Inc.
|
APT7575BN |
TRANSISTOR | MOSFET | N-CHANNEL | 750V V(BR)DSS | 13A I(D) | TO-247AD 晶体管| MOSFET的| N沟道| 750V直流五(巴西)直|13A条(丁)|采用TO - 247AD
|
TOKO, Inc.
|
IXFH4N100 IXFT4N100 IXFH4N100Q IXFT4N100Q |
N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源击穿电000V,导通电.0Ω的N沟道增强型HiPerFET功率MOSFET) 4 A, 1000 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TRANSISTOR | MOSFET | N-CHANNEL | 1KV V(BR)DSS | 4A I(D) | TO-247AD HiPerFET Power MOSFETs Q-Class Discrete MOSFETs: HiPerFET Power MOSFETS
|
IXYS, Corp. IXYS[IXYS Corporation]
|
APT50M60BFN |
TRANSISTOR | MOSFET POWER MODULE | HALF BRIDGE | 500V V(BR)DSS | 76A I(D) 晶体管| MOSFET功率模块|半桥| 500V五(巴西)直| 76A号(丁)
|
Fujitsu, Ltd.
|
IXGH20N60U1 |
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 40A I(C) | TO-247AD 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 40A条一(c)|采用TO - 247AD
|
IXYS, Corp.
|
APT30M40B2VR APT30M40LVR APT30M40LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 76; RDS(on) (Ohms): 0.04; BVDSS (V): 300; 76 A, 300 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA POWER MOS V 300V 76A 0.040 Ohm
|
Microsemi, Corp. Advanced Power Technology
|
HRS75N75V |
70V N-Channel Trench MOSFET
|
SemiHow Co.,Ltd.
|
ZXMP7A17K ZXMP7A17KTC |
70V P-channel enhancement mode MOSFET
|
Zetex Semiconductors
|
ZXMP7A17G ZXMP7A17GTA ZXMP7A17GTC |
70V P-channel enhancement mode MOSFET
|
Zetex Semiconductors
|
FCH041N60F |
N-Channel SuperFETII FRFETMOSFET 600V, 76A, 41m 600V N-Channel MOSFET, FRFET
|
Fairchild Semiconductor
|
APT751R2BN |
9 A, 750 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
|